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GeSbTe is a phase change storage material. Phase change memory (PCM) based on germanium antimony telluride shows significant commercialization potential. It is an alternative memory technology for NOR flash memory and some DRAM markets. Potential future new semiconductor memory chip technology.
Product performance
|
Composition |
Ge,Sb,Te(Different atomic ratio) |
|
Purity |
99.99% |
|
Density |
>6.38g/cm3 |
|
Size |
50.8mm - 440mm |
|
Tolerance |
Diameter：±0.1mm,Thickness：±0.1mm |
| Roughness |
32RMS |
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